NXH010P120MNF1PNG parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ FET, MOSFET/ NXH010P120MNF1PNG

The pictures are for reference only

Brand:

Model:

NXH010P120MNF1PNG

Description:

PIM F1 SIC HALFBRIDGE 1200V 10MO

Stock:

25469

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$21.45

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

114A(Tc)

Drain source voltage (Vdss)

1200V(1.2kV)

FET Type

2 N-channels(two)

FET function

SiC

Gate charge (Qg) at different Vgs (maximum)

454nC @ 20V

Input capacitance at different Vds (Ciss) (maximum)

4707pF @ 800V

On resistance (maximum) for different Ids and Vgs

14 mΩ @ 100A,20V

Power - maximum

250W(Tj)

Vgs (th) (maximum) for different Ids

4.3V @ 40mA

packing

pallet

series

working temperature

-40°C ~ 175°C(TJ)

Encapsulation/Housing

module

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

下载NXH010P120MNF1PNG.pdf

NXH010P120MNF1PNG（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25469,Price reference "real-time change" China/Hongkong。 NXH010P120MNF1PNG package/specs, Download NXH010P120MNF1PNG、Datasheet。